indirect gap semiconductor

英 [ˌɪndəˈrekt ɡæp ˌsemikənˈdʌktə(r)]

美 [ˌɪndəˈrekt ɡæp ˈsemikəndʌktər]

网络间接带隙半导体

There are two ways to improve the luminescence efficiency of indirect band gap semiconductor, one is lowering the dimension of materials, the other is introducing luminescent centers into the materials, and these two ways can remarkably improve the luminescence efficiency and intensity.
对于提高间接带隙半导体材料的发光效率，一般有以下两个途径。其一，降低材料的维数，这将使材料的发光效率得到显著提高。
The obtained results indicate that CdSe with zinc blende structure and wurtzite structure are direct band gap semiconductors; CdSe with rock-salt structure is indirect band gap semiconductor; CdSe with CsCl structure is semimetal.
结果表明，闪锌矿结构和纤锌矿结构CdSe为直接带隙半导体材料；盐岩结构CdSe为间接带隙半导体材料；CsCl结构CdSe为半金属材料。
Silicon is most widely used in the study of micro-electronic materials, but because silicon is an indirect band gap semiconductor, a narrow band gap, low luminescence efficiency, and thus restricting its application in the field of optoelectronics.
硅是微电子学中应用最为广泛的材料，但由于硅是间接带隙的半导体，禁带宽度窄，发光效率很低，因而限制了它在光电子领域中的应用。
Silicon is a indirect band gap semiconductor, whose light-emitting efficiency is very low.
硅材料的禁带宽度较窄，为间接带隙半导体，发光效率很低。